Advances in Memristors, Memristive Devices and Systems by Sundarapandian Vaidyanathan, Christos Volos

By Sundarapandian Vaidyanathan, Christos Volos

This booklet studies at the most recent advances in and purposes of memristors, memristive units and structures. It gathers 20 contributed chapters by way of topic specialists, together with pioneers within the box resembling Leon Chua (UC Berkeley, united states) and R.S. Williams (HP Labs, USA), who're really expert within the a number of issues addressed during this booklet, and covers huge parts of memristors and memristive units reminiscent of: memristor emulators, oscillators, chaotic and hyperchaotic memristive platforms, regulate of memristive platforms, memristor-based min-max circuits, canonic memristors, memristive-based neuromorphic purposes, implementation of memristor-based chaotic oscillators, inverse memristors, linear memristor units, behind schedule memristive platforms, flux-controlled memristive emulators, and so forth.
Throughout the ebook, precise emphasis is given to papers delivering useful options and layout, modeling, and implementation insights to handle present examine difficulties in memristors, memristive units and structures. As such, it bargains a helpful reference ebook on memristors and memristive units for graduate scholars and researchers with a uncomplicated wisdom of electric and keep watch over platforms engineering.

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Advances in Memristors, Memristive Devices and Systems

This publication experiences at the most modern advances in and functions of memristors, memristive units and platforms. It gathers 20 contributed chapters by way of topic specialists, together with pioneers within the box resembling Leon Chua (UC Berkeley, united states) and R. S. Williams (HP Labs, USA), who're really good within the quite a few subject matters addressed during this ebook, and covers vast parts of memristors and memristive units corresponding to: memristor emulators, oscillators, chaotic and hyperchaotic memristive structures, keep watch over of memristive structures, memristor-based min-max circuits, canonic memristors, memristive-based neuromorphic functions, implementation of memristor-based chaotic oscillators, inverse memristors, linear memristor units, not on time memristive structures, flux-controlled memristive emulators, and so on.

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66131678261 V, respectively where the real parts of the Eigen values of Jacobian matrix at these two points are zero (pure imaginary Eigen values). The eigen values within these two bifurcation points lie on the right-half plane (Re(λ) > 0), confirming the second-order memristor could generate oscillation. 38820157073 V, where the functions f1 and f2 in (46a) and (46b) are denoted by f and g, respectively, in (51). Pd. Sah et al. 38820157073 V) implies the bifurcation is super-critical because the parameter µ = V enters the unstable region (Re (λ) > 0) by crossing the imaginary axis from left to right in Fig.

In both the plots of Fig. 11a and b, as the voltage increases the poles of admittance function and the Eigen values also increases. 1305 V the Im p1 and Im p2 become zero. 3 We would like to caution the readers that the DC current Iext is the input in Chua et al. (2012a, b), and the two small-signal equivalent circuits of the potassium ion-channel memristor and the sodium ion-channel memristor in the HH model are connected parallel. Hence, the Eigen values of 1 the Jacobian matrix are identical to the poles of the small-signal impedance Zðs, IÞ≜ VðsÞ IðsÞ = YðsÞ, or equivalently, the zeros of the admittance Y(s).

3b is a double-valued Lissajous figure plotted on the i versus v plane. Such a multi-valued Lissajous figure of v(t), i(t), which passes through the origin is called a pinched hysteresis loop (Chua 2003). This unique feature is the characteristic property of a memristor that distinguishes it from non-memristive devices. The lower figure in Fig. 3b shows the variation of memductance with respect to applied voltage v(t). Fig. 3 a Waveforms of the applied sinusoidal voltage v(t) = A sin(2πft), output current i(t), state variables x1(t), x2(t), and memductance G(t) of the second-order generic memristor.

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